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2SK3176
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS V)
2SK3176
Switching Regulator, DC-DC Converter and Motor Drive Applications
* * * * Low drain-source ON resistance: RDS (ON) = 38 m (typ.) High forward transfer admittance: |Yfs| = 30 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 200 V) Enhancement-mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current Drain power dissipation DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 200 200 20 30 120 150 925 30 15 150 -55 to 150 Unit V V V A W mJ A mJ C C 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE
Pulse (Note 1) (Tc = 25C)
Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA Weight: 4.6 g (typ.)
SC-65 2-16C1B
Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: VDD = 50 V, Tch = 25C (initial), L = 1.66 mH, RG = 25 , IAR = 30 A Note 3: Repetitive rating: pulse width limited by maximum junction temperature. Note 4: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change
in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic sensitive device. Please handle with caution.
Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 0.833 50.0 Unit C/W C/W
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2SK3176
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge tf toff Qg Qgs Qgd Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton Test Condition VGS = 16 V, VDS = 0 V VDS = 200 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 15 A VDS = 10 V, ID = 15 A VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 0 V, f = 1 MHz 10 V VGS 0V 4.7 ID = 15 A RL = 6.7 VOUT Min 200 1.5 15 Typ. 38 30 5400 580 1900 15 55 25 190 125 80 45 Max 10 100 3.5 52 ns nC nC nC Unit A A V V m S pF pF pF
VDD 100 V - Duty 1%, tw = 10 s VDD 160 V, VGS = 10 V, ID = 30 A - VDD 160 V, VGS = 10 V, ID = 30 A - VDD 160 V, VGS = 10 V, ID = 30 A -
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 30 A, VGS = 0 V IDR = 30 A, VGS = 0 V, dIDR/dt = 100 A/s IDR = 30 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 270 3.0 Max 30 90 -2.0 Unit A A V ns C
Marking
TOSHIBA
K3176
Product No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
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2SK3176
ID - VDS
20 10 16 8 6 4 50 15 10 4.8 6 5
ID - VDS
4.6 4.4 Common source Tc = 25C Pulse test
Drain current ID (A)
Drain current ID (A)
15 12
5
Common source Tc = 25C Pulse test 3.8
40 8
30
4.2
8
3.6
20
4 3.8
4
VGS = 3.4 V
10
VGS = 3.6 V
0 0
0.4
0.8
1.2
1.6
2.0
0 0
4
8
12
16
20
Drain-source voltage
VDS (V)
Drain-source voltage
VDS (V)
ID - VGS
50 Common source VDS = 10 V Pulse test 5
VDS - VGS
Common source Tc = 25C Pulse test
40
VDS (V) Drain-source voltage
4
Drain current ID (A)
30
3
20 25 10 100 0 0 Tc = -55C
2 ID = 30 A 1 15 7.5
2
4
6
8
10
0 0
4
8
12
16
20
Gate-source voltage
VGS (V)
Gate-source voltage
VGS (V)
|Yfs| - ID
100 Common source VDS = 10 V Pulse test Tc = -55C 10 5 3 25
RDS (ON) - ID
0.5 0.3 Common source Tc = 25C Pulse test
Forward transfer admittance |Yfs| (S)
30 100
Drain-source ON resistance RDS ()
50
0.1
0.05 0.03
VGS = 10 V 15
1 0.3 0.5
1
3
5
10
30
50
100
0.01 1
3
5
10
30
50
100
Drain current ID (A)
Drain current ID (A)
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2SK3176
RDS (ON) - Tc
0.10 Common source VGS = 10 V Pulse test 100 ID = 30 A 15 7.5 0.06 50 30 Common source Tc = 25C Pulse test
IDR - VDS
Drain-source ON resistance RDS (ON) ()
0.08
Drain reverse current IDR
(A)
10 10 5
0.04
5 3
0.02
3 VGS = 0 V
0 -80
-40
0
40
80
120
160
1 0
0.4
0.8
1.2
1.6
2.0
Case temperature Tc
(C)
Drain-source voltage
VDS (V)
Capacitance - VDS
5 10000 Ciss
Vth - Tc
Common source VDS = 10 V ID = 1 mA Pulse test
Vth (V) Gate threshold voltage
4
(pF)
3000
Capacitance C
3
1000 Coss 300 Common source VGS = 0 V f = 1 MHz Tc = 25C 0.3 1 3 10 30 Crss
2
1
100
30 0.1
100
0 -80
-40
0
40
80
120
160
Drain-source voltage
VDS (V)
Case temperature Tc
(C)
PD - Tc
250 200
Dynamic Input/Output Characteristics
20 Common source ID = 30 A Tc = 25C Pulse test 15 80 VDD = 40 V 100 160
Drain power dissipation PD (W)
VDS (V)
200
VDS 150
Drain-source voltage
10
100
50 VGS
5
50
0 0
40
80
120
160
200
0 0
40
80
120
160
0 200
Case temperature Tc
(C)
Total gate charge Qg
(nC)
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Gate-source voltage
150
VGS (V)
2SK3176
rth - tw
3
Normalized transient thermal impedance rth/Rth (ch-c)
1 Duty = 0.5 0.5 0.3 0.2 0.1 0.1 0.05 0.03 0.05 0.02 Single pulse 0.01 0.01 0.005 0.003 10 100 1m 10 m 100 m PDM t T Duty = t/T Rth (ch-c) = 0.833C/W 1 10
Pulse width
tw
(s)
Safe Operating Area
300 ID max (pulse)* 1000
EAS - Tch
EAS (mJ) Avalanche energy
100
800
Drain current ID (A)
100 s* 50 30 1 ms* ID max (continuous)
600
10 5 3
400
DC operation Tc = 25C
200
1 0.5 *: Single nonrepetitive pulse Tc = 25C 0.3 Curves must be derated linearly with increase in temperature. 0.1 1 3 5 10 30 VDSS max 50 100 300 500
0 25
50
75
100
125
150
Channel temperature (initial) Tch
(C)
15 V -15 V
BVDSS IAR VDD VDS Wave form
Drain-source voltage
VDS (V)
Test circuit RG = 25 VDD = 50 V, L = 1.66 mH
1 2 B VDSS AS = *L*I * B 2 VDSS - VDD
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RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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